Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers
文献类型：期刊论文
| 作者 | Chen, M ; Chen, J ; Zheng, W ; Li, L ; Mu, HC ; Lin, ZX ; Yu, YH ; Wang, X ; Wang, GY |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2001 |
| 卷号 | 19期号:2页码:337-343 |
| 关键词 | ION-IMPLANTATION LAYER FORMATION SIMOX SILICON |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95708]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, M,Chen, J,Zheng, W,et al. Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2001,19(2):337-343. |
| APA | Chen, M.,Chen, J.,Zheng, W.,Li, L.,Mu, HC.,...&Wang, GY.(2001).Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,19(2),337-343. |
| MLA | Chen, M,et al."Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19.2(2001):337-343. |
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