Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li, W ; Li, AZ |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2001 |
| 卷号 | 401期号:1-2页码:279-283 |
| 关键词 | SI-DOPED GAN CHEMICAL-VAPOR-DEPOSITION PHOTOLUMINESCENCE SPECTROSCOPY PHOTO-LUMINESCENCE N-TYPE GAAS FILMS TRANSITIONS NITRIDE ENERGY |
| ISSN号 | 0040-6090 |
| 通讯作者 | Li, AZ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95715]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, W,Li, AZ. Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy[J]. THIN SOLID FILMS,2001,401(1-2):279-283. |
| APA | Li, W,&Li, AZ.(2001).Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy.THIN SOLID FILMS,401(1-2),279-283. |
| MLA | Li, W,et al."Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy".THIN SOLID FILMS 401.1-2(2001):279-283. |
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