Defects and strain in H+ and He+Co-implanted silicon
文献类型：期刊论文
| 作者 | Lin, CL ; Duo, XZ ; Zhang, M |
| 刊名 | SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS
 |
| 出版日期 | 2001 |
| 页码 | 650-654 |
| 关键词 | INDUCED EXFOLIATION INSULATOR |
| 通讯作者 | Lin, CL, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95725]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, CL,Duo, XZ,Zhang, M. Defects and strain in H+ and He+Co-implanted silicon[J]. SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,2001:650-654. |
| APA | Lin, CL,Duo, XZ,&Zhang, M.(2001).Defects and strain in H+ and He+Co-implanted silicon.SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,650-654. |
| MLA | Lin, CL,et al."Defects and strain in H+ and He+Co-implanted silicon".SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS (2001):650-654. |
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