Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing
文献类型：期刊论文
| 作者 | Duo, XH ; Liu, WL ; Zhang, M ; Wang, LW ; Lin, CL ; Okuyama, M ; Noda, M ; Cheung, WY ; Wong, SP ; Chu, PK ; Hu, PG ; Wang, SX ; Wang, LM |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:8页码:3780-3786 |
| 关键词 | INDUCED EXFOLIATION INDUCED DEFECTS COIMPLANTATION MECHANISM CAVITIES AU |
| ISSN号 | 0021-8979 |
| 通讯作者 | Duo, XH, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95751]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Duo, XH,Liu, WL,Zhang, M,et al. Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing[J]. JOURNAL OF APPLIED PHYSICS,2001,90(8):3780-3786. |
| APA | Duo, XH.,Liu, WL.,Zhang, M.,Wang, LW.,Lin, CL.,...&Wang, LM.(2001).Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing.JOURNAL OF APPLIED PHYSICS,90(8),3780-3786. |
| MLA | Duo, XH,et al."Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing".JOURNAL OF APPLIED PHYSICS 90.8(2001):3780-3786. |
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