Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
文献类型：期刊论文
| 作者 | Wang, LW ; Huang, JP ; Duo, XZ ; Song, ZT ; Lin, CL ; Zetterling, CM ; Ostling, M |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2000 |
| 卷号 | 33期号:12页码:1551-1555 |
| 关键词 | ENHANCED THERMAL-OXIDATION ION-IMPLANTATION SILICON-CARBIDE AMORPHIZATION LAYERS |
| ISSN号 | 0022-3727 |
| 通讯作者 | Wang, LW, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95765]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, LW,Huang, JP,Duo, XZ,et al. Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2000,33(12):1551-1555. |
| APA | Wang, LW.,Huang, JP.,Duo, XZ.,Song, ZT.,Lin, CL.,...&Ostling, M.(2000).Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen.JOURNAL OF PHYSICS D-APPLIED PHYSICS,33(12),1551-1555. |
| MLA | Wang, LW,et al."Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen".JOURNAL OF PHYSICS D-APPLIED PHYSICS 33.12(2000):1551-1555. |
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