中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Compositional and morphological study of reactive ion beam deposited AlN thin films

文献类型:期刊论文

作者Cheng, LL ; Yu, YH ; Sundaravel, B ; Luo, EZ ; Lin, S ; Lei, YM ; Ren, CX ; Cheung, WY ; Wong, SP ; Xu, JB ; Wilson, IH
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2000
卷号169页码:94-97
ISSN号0168-583X
关键词AUGER-ELECTRON SPECTROSCOPY ALUMINUM NITRIDE GROWTH AIN
通讯作者Cheng, LL, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95771]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Cheng, LL,Yu, YH,Sundaravel, B,et al. Compositional and morphological study of reactive ion beam deposited AlN thin films[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2000,169:94-97.
APA Cheng, LL.,Yu, YH.,Sundaravel, B.,Luo, EZ.,Lin, S.,...&Wilson, IH.(2000).Compositional and morphological study of reactive ion beam deposited AlN thin films.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,169,94-97.
MLA Cheng, LL,et al."Compositional and morphological study of reactive ion beam deposited AlN thin films".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 169(2000):94-97.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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