Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Jin, SR ; Ramsteiner, M ; Grahn, HT ; Ploog, KH ; Zhu, ZQ ; Shen, DX ; Li, AZ ; Metev, P ; Guido, LJ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2000 |
| 卷号 | 212期号:1-2页码:56-60 |
| 关键词 | PHOTOLUMINESCENCE TRANSITIONS DEPENDENCE BAND MG |
| ISSN号 | 0022-0248 |
| 通讯作者 | Jin, SR, Chinese Acad Sci, Shanghai Inst Met, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95789]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jin, SR,Ramsteiner, M,Grahn, HT,et al. Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):56-60. |
| APA | Jin, SR.,Ramsteiner, M.,Grahn, HT.,Ploog, KH.,Zhu, ZQ.,...&Guido, LJ.(2000).Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,212(1-2),56-60. |
| MLA | Jin, SR,et al."Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 212.1-2(2000):56-60. |
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