中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory

文献类型:期刊论文

作者Lei,YM ; Yu,YH ; Cheng,LL ; Ren,CX ; Zou,SC ; Wong,SP ; Chen,DH ; Wilson,IH
刊名MATERIALS LETTERS
出版日期2000
卷号43期号:4页码:215-219
ISSN号0167-577X
关键词CARBON GROWTH
通讯作者Lei, YM, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Materials Science ; Multidisciplinary; Physics ; Applied
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95791]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Lei,YM,Yu,YH,Cheng,LL,et al. IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory[J]. MATERIALS LETTERS,2000,43(4):215-219.
APA Lei,YM.,Yu,YH.,Cheng,LL.,Ren,CX.,Zou,SC.,...&Wilson,IH.(2000).IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory.MATERIALS LETTERS,43(4),215-219.
MLA Lei,YM,et al."IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory".MATERIALS LETTERS 43.4(2000):215-219.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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