IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory
文献类型:期刊论文
作者 | Lei,YM ; Yu,YH ; Cheng,LL ; Ren,CX ; Zou,SC ; Wong,SP ; Chen,DH ; Wilson,IH |
刊名 | MATERIALS LETTERS |
出版日期 | 2000 |
卷号 | 43期号:4页码:215-219 |
ISSN号 | 0167-577X |
关键词 | CARBON GROWTH |
通讯作者 | Lei, YM, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
学科主题 | Materials Science ; Multidisciplinary; Physics ; Applied |
收录类别 | SCI |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95791] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Lei,YM,Yu,YH,Cheng,LL,et al. IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory[J]. MATERIALS LETTERS,2000,43(4):215-219. |
APA | Lei,YM.,Yu,YH.,Cheng,LL.,Ren,CX.,Zou,SC.,...&Wilson,IH.(2000).IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory.MATERIALS LETTERS,43(4),215-219. |
MLA | Lei,YM,et al."IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory".MATERIALS LETTERS 43.4(2000):215-219. |
入库方式: OAI收割
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