中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth of biaxially textured yttria-stabilized zirconia thin films on Si(111) substrate by ion beam assisted deposition

文献类型:期刊论文

作者Mu,HC ; Ren,CX ; Jiang,BY ; Ding,XZ ; Yu,YH ; Wang,X ; Liu,XH ; Zhou,GE ; Jia,YB
刊名CHINESE PHYSICS LETTERS
出版日期2000
卷号17期号:3页码:221-223
关键词BA-CU-O HIGH CRITICAL CURRENTS BUFFER LAYERS SUPERCONDUCTING FILMS SILICON YBA2CU3O7-DELTA BOMBARDMENT SI ORIENTATION DIOXIDE
ISSN号0256-307X
通讯作者Mu, HC, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题Physics ; Multidisciplinary
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95792]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Mu,HC,Ren,CX,Jiang,BY,et al. Growth of biaxially textured yttria-stabilized zirconia thin films on Si(111) substrate by ion beam assisted deposition[J]. CHINESE PHYSICS LETTERS,2000,17(3):221-223.
APA Mu,HC.,Ren,CX.,Jiang,BY.,Ding,XZ.,Yu,YH.,...&Jia,YB.(2000).Growth of biaxially textured yttria-stabilized zirconia thin films on Si(111) substrate by ion beam assisted deposition.CHINESE PHYSICS LETTERS,17(3),221-223.
MLA Mu,HC,et al."Growth of biaxially textured yttria-stabilized zirconia thin films on Si(111) substrate by ion beam assisted deposition".CHINESE PHYSICS LETTERS 17.3(2000):221-223.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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