Gas source molecular beam epitaxy of InP-based microstructures: material growth, characterization and device applications
文献类型：期刊论文
| 作者 | Chen, JX ; Li, AZ |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2000 |
| 卷号 | 75期号:2-3页码:115-120 |
| 关键词 | HETEROSTRUCTURES SUBBAND GSMBE |
| ISSN号 | 0921-5107 |
| 通讯作者 | Chen, JX, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95801]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, JX,Li, AZ. Gas source molecular beam epitaxy of InP-based microstructures: material growth, characterization and device applications[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,75(2-3):115-120. |
| APA | Chen, JX,&Li, AZ.(2000).Gas source molecular beam epitaxy of InP-based microstructures: material growth, characterization and device applications.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,75(2-3),115-120. |
| MLA | Chen, JX,et al."Gas source molecular beam epitaxy of InP-based microstructures: material growth, characterization and device applications".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 75.2-3(2000):115-120. |
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