High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Chen, XJ ; Chen, JX ; Chen, YQ ; Peng, P ; Yang, QK ; Li, AZ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:12页码:915-917 |
| 关键词 | CURRENT TRANSPORT GAAS BASE HBTS RECOMBINATION ALGAAS/GAAS EMITTER |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, XJ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95812]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, XJ,Chen, JX,Chen, YQ,et al. High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy[J]. CHINESE PHYSICS LETTERS,2000,17(12):915-917. |
| APA | Chen, XJ,Chen, JX,Chen, YQ,Peng, P,Yang, QK,&Li, AZ.(2000).High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy.CHINESE PHYSICS LETTERS,17(12),915-917. |
| MLA | Chen, XJ,et al."High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy".CHINESE PHYSICS LETTERS 17.12(2000):915-917. |
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