D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE
文献类型：期刊论文
| 作者 | Zhao, ZB ; Li, W ; Qi, M ; Li, AZ |
| 刊名 | FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
 |
| 出版日期 | 2000 |
| 卷号 | 4086页码:282-285 |
| 关键词 | YELLOW LUMINESCENCE NATIVE DEFECTS FILMS |
| ISSN号 | 0277-786X |
| 通讯作者 | Zhao, ZB, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Optics |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95830]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhao, ZB,Li, W,Qi, M,et al. D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE[J]. FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS,2000,4086:282-285. |
| APA | Zhao, ZB,Li, W,Qi, M,&Li, AZ.(2000).D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE.FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS,4086,282-285. |
| MLA | Zhao, ZB,et al."D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE".FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS 4086(2000):282-285. |
入库方式： OAI收割
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