中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AlN thin films prepared by reactive ion beam coating

文献类型:期刊论文

作者Cheng,LL ; Yu,YH ; Sundaravel,B ; Luo,EZ ; Lin,S ; Lei,YM ; Ren,CX ; Cheung,WY ; Wong,SP ; Xu,JB ; Wilson,IH
刊名FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING
出版日期2000
卷号585期号:0页码:251-256
ISSN号0272-9172
关键词AUGER-ELECTRON SPECTROSCOPY ALUMINUM NITRIDE DEPOSITION GROWTH
通讯作者Cheng, LL, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai, Peoples R China
学科主题Materials Science ; Multidisciplinary
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95831]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Cheng,LL,Yu,YH,Sundaravel,B,et al. AlN thin films prepared by reactive ion beam coating[J]. FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING,2000,585(0):251-256.
APA Cheng,LL.,Yu,YH.,Sundaravel,B.,Luo,EZ.,Lin,S.,...&Wilson,IH.(2000).AlN thin films prepared by reactive ion beam coating.FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING,585(0),251-256.
MLA Cheng,LL,et al."AlN thin films prepared by reactive ion beam coating".FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING 585.0(2000):251-256.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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