XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX
文献类型:期刊论文
作者 | Zhang, M ; Liu, WL ; Duo, XZ ; An, ZH ; Lin, CL ; Chu, PK ; Scholz, R |
刊名 | 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS
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出版日期 | 2000 |
页码 | 281-284 |
关键词 | CAVITIES SILICON SEPARATION |
通讯作者 | Zhang, M, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
学科主题 | Computer Science, Hardware & Architecture; Engineering, Electrical & Electronic |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95835] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, M,Liu, WL,Duo, XZ,et al. XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX[J]. 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS,2000:281-284. |
APA | Zhang, M.,Liu, WL.,Duo, XZ.,An, ZH.,Lin, CL.,...&Scholz, R.(2000).XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX.2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS,281-284. |
MLA | Zhang, M,et al."XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX".2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS (2000):281-284. |
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