中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

文献类型:期刊论文

作者Zhang, M ; Liu, WL ; Duo, XZ ; An, ZH ; Lin, CL ; Chu, PK ; Scholz, R
刊名2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS
出版日期2000
页码281-284
关键词CAVITIES SILICON SEPARATION
通讯作者Zhang, M, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Computer Science, Hardware & Architecture; Engineering, Electrical & Electronic
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95835]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, M,Liu, WL,Duo, XZ,et al. XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX[J]. 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS,2000:281-284.
APA Zhang, M.,Liu, WL.,Duo, XZ.,An, ZH.,Lin, CL.,...&Scholz, R.(2000).XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX.2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS,281-284.
MLA Zhang, M,et al."XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX".2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS (2000):281-284.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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