Intense UV-visible photoluminescence from Si+ and N+ co-implanted thermal SiO2 films
文献类型：期刊论文
| 作者 | Yu,YH ; Li,L ; Lei,YM ; Zhao,J ; Mao,DS ; Zou,SC ; Sundaraval,B ; Luo,EZ ; Wong,SP ; Xu,JB ; Wilson,IH |
| 刊名 | 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS
 |
| 出版日期 | 2000 |
| 期号 | 0页码:765-768 |
| 关键词 | LAYERS |
| 通讯作者 | Yu, YH, Acad Sinica, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Computer Science ; Hardware & Architecture; Engineering ; Electrical & Electronic |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95836]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu,YH,Li,L,Lei,YM,et al. Intense UV-visible photoluminescence from Si+ and N+ co-implanted thermal SiO2 films[J]. 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS,2000(0):765-768. |
| APA | Yu,YH.,Li,L.,Lei,YM.,Zhao,J.,Mao,DS.,...&Wilson,IH.(2000).Intense UV-visible photoluminescence from Si+ and N+ co-implanted thermal SiO2 films.2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS(0),765-768. |
| MLA | Yu,YH,et al."Intense UV-visible photoluminescence from Si+ and N+ co-implanted thermal SiO2 films".2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS .0(2000):765-768. |
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