中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon

文献类型:期刊论文

作者Lei,YM ; Yu,YH ; Cheng,LL ; Sundaraval,B ; Luo,EZ ; Ren,CX ; Zou,SC ; Wong,SP ; Chen,DH ; Wilson,IH
刊名JOURNAL OF APPLIED PHYSICS
出版日期2000
卷号88期号:5页码:3053-3058
ISSN号0021-8979
关键词3C-SIC FILMS THIN-FILMS GROWTH CARBON PRESSURE
通讯作者Lei, YM, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics ; Applied
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95842]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Lei,YM,Yu,YH,Cheng,LL,et al. Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon[J]. JOURNAL OF APPLIED PHYSICS,2000,88(5):3053-3058.
APA Lei,YM.,Yu,YH.,Cheng,LL.,Sundaraval,B.,Luo,EZ.,...&Wilson,IH.(2000).Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon.JOURNAL OF APPLIED PHYSICS,88(5),3053-3058.
MLA Lei,YM,et al."Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon".JOURNAL OF APPLIED PHYSICS 88.5(2000):3053-3058.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。