Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon
文献类型：期刊论文
| 作者 | Yang, SH ; Chen, DH ; Li, HQ ; Zhang, YL ; Mo, D ; Wong, SP |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2000 |
| 卷号 | 116期号:3页码:177-180 |
| 关键词 | ARC ION-SOURCE CARBON IMPLANTATION |
| ISSN号 | 0038-1098 |
| 通讯作者 | Mo, D, Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China |
| 学科主题 | Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95849]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, SH,Chen, DH,Li, HQ,et al. Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon[J]. SOLID STATE COMMUNICATIONS,2000,116(3):177-180. |
| APA | Yang, SH,Chen, DH,Li, HQ,Zhang, YL,Mo, D,&Wong, SP.(2000).Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon.SOLID STATE COMMUNICATIONS,116(3),177-180. |
| MLA | Yang, SH,et al."Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon".SOLID STATE COMMUNICATIONS 116.3(2000):177-180. |
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