Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures
文献类型：期刊论文
| 作者 | Jin, SR ; Ramsteiner, M ; Grahn, HT ; Ploog, KH ; Li, ZH ; Shen, DX ; Zhu, ZQ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2000 |
| 卷号 | 88期号:7页码:4075-4078 |
| 关键词 | TEMPERATURE-DEPENDENCE RECOMBINATION LIFETIMES INGAAS/GAAS DYNAMICS CARRIERS KINETICS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Jin, SR, Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95852]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jin, SR,Ramsteiner, M,Grahn, HT,et al. Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures[J]. JOURNAL OF APPLIED PHYSICS,2000,88(7):4075-4078. |
| APA | Jin, SR.,Ramsteiner, M.,Grahn, HT.,Ploog, KH.,Li, ZH.,...&Zhu, ZQ.(2000).Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures.JOURNAL OF APPLIED PHYSICS,88(7),4075-4078. |
| MLA | Jin, SR,et al."Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures".JOURNAL OF APPLIED PHYSICS 88.7(2000):4075-4078. |
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