Intrinsic limit of electrical properties of transparent conductive oxide films
文献类型:期刊论文
作者 | Chen, M ; Pei, ZL ; Wang, X ; Yu, YH ; Liu, XH ; Sun, C ; Wen, LS |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
出版日期 | 2000 |
卷号 | 33期号:20页码:2538-2548 |
ISSN号 | 0022-3727 |
关键词 | DOPED IN2O3 FILMS DOMINANT SCATTERING MECHANISMS AMORPHOUS INDIUM OXIDE OPTICAL-PROPERTIES THIN-FILMS ZNO FILMS STRUCTURAL-PROPERTIES REACTIVE EVAPORATION PHYSICAL-PROPERTIES SPRAY-PYROLYSIS |
通讯作者 | Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95860] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, M,Pei, ZL,Wang, X,et al. Intrinsic limit of electrical properties of transparent conductive oxide films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2000,33(20):2538-2548. |
APA | Chen, M.,Pei, ZL.,Wang, X.,Yu, YH.,Liu, XH.,...&Wen, LS.(2000).Intrinsic limit of electrical properties of transparent conductive oxide films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,33(20),2538-2548. |
MLA | Chen, M,et al."Intrinsic limit of electrical properties of transparent conductive oxide films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 33.20(2000):2538-2548. |
入库方式: OAI收割
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