中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrinsic limit of electrical properties of transparent conductive oxide films

文献类型:期刊论文

作者Chen, M ; Pei, ZL ; Wang, X ; Yu, YH ; Liu, XH ; Sun, C ; Wen, LS
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2000
卷号33期号:20页码:2538-2548
ISSN号0022-3727
关键词DOPED IN2O3 FILMS DOMINANT SCATTERING MECHANISMS AMORPHOUS INDIUM OXIDE OPTICAL-PROPERTIES THIN-FILMS ZNO FILMS STRUCTURAL-PROPERTIES REACTIVE EVAPORATION PHYSICAL-PROPERTIES SPRAY-PYROLYSIS
通讯作者Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95860]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, M,Pei, ZL,Wang, X,et al. Intrinsic limit of electrical properties of transparent conductive oxide films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2000,33(20):2538-2548.
APA Chen, M.,Pei, ZL.,Wang, X.,Yu, YH.,Liu, XH.,...&Wen, LS.(2000).Intrinsic limit of electrical properties of transparent conductive oxide films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,33(20),2538-2548.
MLA Chen, M,et al."Intrinsic limit of electrical properties of transparent conductive oxide films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 33.20(2000):2538-2548.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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