Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy
文献类型：期刊论文
| 作者 | Gong, YN ; Mo, JJ ; Yu, HS ; Wang, L ; Xia, GQ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2000 |
| 卷号 | 209期号:1页码:43-49 |
| 关键词 | P-TYPE GAAS DOPED GAAS DEPOSITION CCL4 TETRACHLORIDE MOVPE MOCVD |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gong, YN, Chinese Acad Sci, Shanghai Inst Met, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95868]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gong, YN,Mo, JJ,Yu, HS,et al. Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,209(1):43-49. |
| APA | Gong, YN,Mo, JJ,Yu, HS,Wang, L,&Xia, GQ.(2000).Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy.JOURNAL OF CRYSTAL GROWTH,209(1),43-49. |
| MLA | Gong, YN,et al."Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy".JOURNAL OF CRYSTAL GROWTH 209.1(2000):43-49. |
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