Electron transport and optical absorption in semiconductors under intense terahertz radiations
文献类型：期刊论文
| 作者 | Lei, XL |
| 刊名 | PHYSICA B
 |
| 出版日期 | 2000 |
| 卷号 | 279期号:1-3页码:208-210 |
| 关键词 | GAAS/ALAS SUPERLATTICE DYNAMIC LOCALIZATION FIELD IRRADIATION SUPPRESSION DRIVEN |
| ISSN号 | 0921-4526 |
| 通讯作者 | Lei, XL, Acad Sinica, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95875]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lei, XL. Electron transport and optical absorption in semiconductors under intense terahertz radiations[J]. PHYSICA B,2000,279(1-3):208-210. |
| APA | Lei, XL.(2000).Electron transport and optical absorption in semiconductors under intense terahertz radiations.PHYSICA B,279(1-3),208-210. |
| MLA | Lei, XL."Electron transport and optical absorption in semiconductors under intense terahertz radiations".PHYSICA B 279.1-3(2000):208-210. |
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