中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation of high quality amorphous Al2O3 thin film on silicon and its applications

文献类型:期刊论文

作者Wan, Q ; Zhang, NL ; Wang, LW ; Shen, QW ; Lin, CL
刊名SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS
出版日期2001
页码1468-1470
关键词CHEMICAL-VAPOR-DEPOSITION
通讯作者Wan, Q, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95737]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wan, Q,Zhang, NL,Wang, LW,et al. Preparation of high quality amorphous Al2O3 thin film on silicon and its applications[J]. SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,2001:1468-1470.
APA Wan, Q,Zhang, NL,Wang, LW,Shen, QW,&Lin, CL.(2001).Preparation of high quality amorphous Al2O3 thin film on silicon and its applications.SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,1468-1470.
MLA Wan, Q,et al."Preparation of high quality amorphous Al2O3 thin film on silicon and its applications".SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS (2001):1468-1470.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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