GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 mu m wavelength lasers
文献类型：期刊论文
| 作者 | Chen, JX ; Li, AZ ; Chen, YQ ; Zhang, YG(张永刚） ; Qi, M ; Lin, XR ; Frojdh, K ; Stoltz, B |
| 刊名 | COMPOUND SEMICONDUCTORS 1999
 |
| 出版日期 | 2000 |
| 期号 | 166页码:63-66 |
| ISSN号 | 0951-3248 |
| 通讯作者 | Chen, JX, Chinese Acad Sci, Shanghai Inst Met, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95828]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, JX,Li, AZ,Chen, YQ,et al. GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 mu m wavelength lasers[J]. COMPOUND SEMICONDUCTORS 1999,2000(166):63-66. |
| APA | Chen, JX.,Li, AZ.,Chen, YQ.,Zhang, YG.,Qi, M.,...&Stoltz, B.(2000).GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 mu m wavelength lasers.COMPOUND SEMICONDUCTORS 1999(166),63-66. |
| MLA | Chen, JX,et al."GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 mu m wavelength lasers".COMPOUND SEMICONDUCTORS 1999 .166(2000):63-66. |
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