Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination
文献类型:期刊论文
作者 | Su RG(苏瑞巩)![]() ![]() ![]() |
刊名 | Langmuir
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出版日期 | 2011 |
卷号 | 27期号:21页码:13220-13225 |
通讯作者邮箱 | gscheng2006@sinano.ac.cn |
关键词 | Self-Assembled Monolayers Nanowire Arrays Gallium Nitride Thin-Films Tio2 Gan Water Zno Irradiation Conversion |
ISSN号 | 0743-7463 |
产权排序 | [Su, Ruigong; Liu, Haibin; Kong, Tao; Song, Qin; Li, Ning; Cheng, Guosheng] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China; [Su, Ruigong; Li, Ning; Cheng, Guosheng] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; [Su, Ruigong; Li, Ning; Jin, Gang] Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China |
通讯作者 | Cheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China |
合作状况 | 国内 |
中文摘要 | We report a facile route to reversibly tune surface wettability of In(x)Ga((1-x))N (InGaN) nanotip arrays by octyl-phosphonic acid (OPA) modification and ultraviolet-visible (UV-vis) light illuminations. Well aligned InGaN nanotip arrays were grown by chemical vapor deposition (CVD). OPA was covalently attached to the InGaN nanotip surface, which was initially oxidized in Piranha solution. Because of the high surface energy of polar groups, OPA-coated InGaN nanotip arrays demonstrated superhydrophobic properties (contact angle of 154 degrees). Transitions between superhydrophobicity and hydrophilicity were obtained through OPA adsorption and UV-vis light illumination. The LnGaN nanotip surface chemistry was further characterized by X-ray photoelectron spectroscopy (XPS), which suggested a scission mechanism at P-C and MO-P (M = In and Ga) bonds of bound OPA molecules. Meanwhile, no significant surface degradation was observed after the OPA modification and phototreatments. |
学科主题 | Chemistry; Materials Science |
分类号 | 一类 |
收录类别 | SCI ; EI |
资助信息 | This work was partially funded by the Key Program of the National Science Foundation of China (Award 10834004) and the China Postdoctoral Science Foundation (20100471393). We are grateful for the professional services of Platforms of Characterization and Test and the Nanofabrication Facility at the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences. We thank Professor Xuefeng Gao for the measurements of water CAs, Dr. Qi Zhang and Dr. Youpin Gong for helpful discussion, and Dr. Beibei Zhang for assisting in XPS measurements. |
原文出处 | http://dx.doi.org/10.1021/la203072n |
语种 | 英语 |
WOS记录号 | WOS:000296211800057 |
公开日期 | 2012-04-01 |
源URL | [http://dspace.imech.ac.cn/handle/311007/45067] ![]() |
专题 | 力学研究所_国家微重力实验室 |
推荐引用方式 GB/T 7714 | Su RG,Liu HB,Kong T,et al. Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination[J]. Langmuir,2011,27(21):13220-13225. |
APA | 苏瑞巩.,Liu HB.,Kong T.,Song Q.,李宁.,...&Cheng GS.(2011).Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination.Langmuir,27(21),13220-13225. |
MLA | 苏瑞巩,et al."Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination".Langmuir 27.21(2011):13220-13225. |
入库方式: OAI收割
来源:力学研究所
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