Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems
文献类型：期刊论文
| 作者 | Chen QS(陈启生) ; Jiang YN(姜燕妮); Yan JY(颜君毅); Li W(李炜); Prasad V
|
| 刊名 | Research on Chemical Intermediates
 |
| 出版日期 | 2011 |
| 卷号 | 37期号:2-5页码:467-477 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| ISSN号 | 0922-6168 |
| 关键词 | Gan Ammonothermal Growth Baffle Opening Fluid Flow Thermal Fields Gallium Nitride |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China |
| 产权排序 | [Chen, Qi-Sheng; Jiang, Yan-Ni; Yan, Jun-Yi; Li, Wei] Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China; [Prasad, V] Univ N Texas, Denton, TX 76203 USA |
| 合作状况 | 国际 |
| 中文摘要 | Gallium nitride (GaN) is a wide-bandgap semiconductor material with a wide array of applications in optoelectronics and electronics. Modeling of the fluid flow and thermal fields is discussed, and simulations of velocity and volumetric-flow-rate profiles in different pressure systems are shown. The nutrient is considered as a porous media bed, and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite-volume method. We analyzed the heat and mass transfer behaviors in autoclaves with diameters of 2.22, 4.44, and 10 cm. The effects of baffle design on flow pattern, and heat and mass transfer in different autoclaves are analyzed. For the research-grade autoclave with diameter of 2.22 cm, the constraint for the GaN growth is found to be the growth kinetics and the total area of seed surfaces in the case of baffle opening of 10%. For large-size pressure systems, the concentration profiles change dramatically due to stronger convection at higher Grashof numbers. The volumetric flow rates of the solvent across the baffles are calculated. Since ammonothermal growth experiments are expensive and time consuming, modeling becomes an effective tool for research and optimization of ammonothermal growth processes. |
| 学科主题 | Chemistry |
| 类目[WOS] | Chemistry, Multidisciplinary |
| 分类号 | 二类/Q2 |
| 研究领域[WOS] | Chemistry |
| 关键词[WOS] | GALLIUM NITRIDE |
| 收录类别 | SCI ; EI |
| 原文出处 | http://dx.doi.org/10.1007/s11164-011-0276-0 |
| 语种 | 英语 |
| WOS记录号 | WOS:000291159400039 |
| 公开日期 | 2012-04-01 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/45089]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Chen QS,Jiang YN,Yan JY,et al. Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems[J]. Research on Chemical Intermediates,2011,37(2-5):467-477. |
| APA | 陈启生,姜燕妮,颜君毅,李炜,&Prasad V.(2011).Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems.Research on Chemical Intermediates,37(2-5),467-477. |
| MLA | 陈启生,et al."Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems".Research on Chemical Intermediates 37.2-5(2011):467-477. |
入库方式： OAI收割
来源：力学研究所
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