Numerical simulation of ammonothermal growth processes of GaN crystals
文献类型：期刊论文
| 作者 | Jiang YN(姜燕妮); Chen QS(陈启生) ; Prasad V
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2011 |
| 卷号 | 318期号:1页码:411-414 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Convection Fluid Flow Growth Models Ammonothermal Growth Gan Single-Crystals Gallium Nitride Heat-Transfer Fluid-Flow |
| ISSN号 | 0022-0248 |
| 产权排序 | [Jiang, Yan-Ni; Chen, Qi-Sheng] Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China; [Prasad, V] Univ N Texas, Denton, TX 76203 USA |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China |
| 合作状况 | 国际 |
| 中文摘要 | Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonothermal growth of GaN crystal of 1 in. size in a cylindrical high-pressure autoclave and discussed the effects of the different baffle design. We can conclude that, under the condition of forward solubility, the small opening is not in favor of the crystal growth. When the opening increases from 12% to 16%, the flow direction in the central hole changes from positive to negative. In the cases of 16% and 20% openings the flow in the autoclave exhibits a steady circulation, so the growth is stable. The transfer of raw material depends on the baffle opening and the temperature difference between growth zone and dissolving zone. (C) 2010 Elsevier B.V. All rights reserved. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 分类号 | 二类/Q2 |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | SINGLE-CRYSTALS ; GALLIUM NITRIDE ; HEAT-TRANSFER ; FLUID-FLOW |
| 收录类别 | SCI ; EI |
| 原文出处 | http://dx.doi.org/10.1016/j.jcrysgro.2010.10.218 |
| 语种 | 英语 |
| WOS记录号 | WOS:000289653900085 |
| 公开日期 | 2012-04-01 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/45096]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Jiang YN,Chen QS,Prasad V. Numerical simulation of ammonothermal growth processes of GaN crystals[J]. Journal of Crystal Growth,2011,318(1):411-414. |
| APA | 姜燕妮,陈启生,&Prasad V.(2011).Numerical simulation of ammonothermal growth processes of GaN crystals.Journal of Crystal Growth,318(1),411-414. |
| MLA | 姜燕妮,et al."Numerical simulation of ammonothermal growth processes of GaN crystals".Journal of Crystal Growth 318.1(2011):411-414. |
入库方式： OAI收割
来源：力学研究所
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