Numerical simulation of ammonothermal growth processes of GaN crystals
文献类型：会议论文
| 作者 | Jiang YN(姜燕妮); Chen QS(陈启生) ; Jiang YN(姜燕妮)
|
| 出版日期 | 2011 |
| 会议名称 | 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) |
| 会议日期 | AUG 08-13, 2010 |
| 会议地点 | Beijing, PEOPLES R CHINA |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Convection Fluid flow Growth models Ammonothermal growth GaN |
| 卷号 | 318 |
| 期号 | 1 |
| 页码 | 411-414 |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China |
| 中文摘要 | Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonothermal growth of GaN crystal of 1 in. size in a cylindrical high-pressure autoclave and discussed the effects of the different baffle design. We can conclude that, under the condition of forward solubility, the small opening is not in favor of the crystal growth. When the opening increases from 12% to 16%, the flow direction in the central hole changes from positive to negative. In the cases of 16% and 20% openings the flow in the autoclave exhibits a steady circulation, so the growth is stable. The transfer of raw material depends on the baffle opening and the temperature difference between growth zone and dissolving zone. (C) 2010 Elsevier B.V. All rights reserved. |
| 收录类别 | CPCI（ISTP） |
| 合作状况 | 国际 |
| 产权排序 | Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China; Univ N Texas, Denton, TX 76203 USA |
| 会议网址 | http://dx.doi.org/10.1016/j.jcrysgro.2010.10.218 |
| 会议录 | JOURNAL OF CRYSTAL GROWTH
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/45323]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Jiang YN,Chen QS,Jiang YN. Numerical simulation of ammonothermal growth processes of GaN crystals[C]. 见:16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14). Beijing, PEOPLES R CHINA. AUG 08-13, 2010.http://dx.doi.org/10.1016/j.jcrysgro.2010.10.218. |
入库方式： OAI收割
来源：力学研究所
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