Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory
文献类型：期刊论文
| 作者 | Lu,YG ; Song,SN ; Song,ZT ; Ren,WC ; Cheng,Y ; Liu,B |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2011 |
| 卷号 | 4期号:9页码:94102 |
| 关键词 | JAPAN SOC APPLIED PHYSICS |
| ISSN号 | 1882-0778 |
| 学科主题 | Physics ; Applied |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106739]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu,YG,Song,SN,Song,ZT,et al. Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory[J]. APPLIED PHYSICS EXPRESS,2011,4(9):94102. |
| APA | Lu,YG,Song,SN,Song,ZT,Ren,WC,Cheng,Y,&Liu,B.(2011).Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory.APPLIED PHYSICS EXPRESS,4(9),94102. |
| MLA | Lu,YG,et al."Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory".APPLIED PHYSICS EXPRESS 4.9(2011):94102. |
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