Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Yang, XM ; Yu, T ; Wu, XM ; Zhuge, LJ ; Ge, SB ; He, JJ |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011 |
| 卷号 | 257期号:22页码:9277-9281 |
| 关键词 | ELSEVIER SCIENCE BV |
| ISSN号 | 0169-4332 |
| 学科主题 | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 语种 | 英语 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106742]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, XM,Yu, T,Wu, XM,et al. Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy[J]. APPLIED SURFACE SCIENCE,2011,257(22):9277-9281. |
| APA | Yang, XM,Yu, T,Wu, XM,Zhuge, LJ,Ge, SB,&He, JJ.(2011).Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy.APPLIED SURFACE SCIENCE,257(22),9277-9281. |
| MLA | Yang, XM,et al."Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy".APPLIED SURFACE SCIENCE 257.22(2011):9277-9281. |
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