High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
文献类型：期刊论文
| 作者 | Yu,W ; Zhang,B ; Zhao,QT ; Hartmann,JM ; Buca,D ; Nichau,A ; Luptak,R ; Lopes,JMJ ; Lenk,S ; Luysberg,M ; Bourdelle,KK ; Wang,X ; Mantl,S |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2011 |
| 卷号 | 62期号:1页码:185-188 |
| 关键词 | PERGAMON-ELSEVIER SCIENCE LTD |
| ISSN号 | 0038-1101 |
| 学科主题 | Engineering ; Electrical & Electronic; Physics ; Applied; Physics ; Condensed Matter |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106747]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu,W,Zhang,B,Zhao,QT,et al. High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate[J]. SOLID-STATE ELECTRONICS,2011,62(1):185-188. |
| APA | Yu,W.,Zhang,B.,Zhao,QT.,Hartmann,JM.,Buca,D.,...&Mantl,S.(2011).High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate.SOLID-STATE ELECTRONICS,62(1),185-188. |
| MLA | Yu,W,et al."High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate".SOLID-STATE ELECTRONICS 62.1(2011):185-188. |
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