Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 mu m partially depleted silicon-on-insulator n-MOSFETs
文献类型：期刊论文
| 作者 | Zhou,JH ; Pang,A ; Cao,S ; Zou,SC |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2011 |
| 卷号 | 51期号:12页码:2077-2080 |
| 关键词 | PERGAMON-ELSEVIER SCIENCE LTD |
| ISSN号 | 0026-2714 |
| 学科主题 | Engineering ; Electrical & Electronic; Nanoscience & Nanotechnology; Physics ; Applied |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106754]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou,JH,Pang,A,Cao,S,et al. Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 mu m partially depleted silicon-on-insulator n-MOSFETs[J]. MICROELECTRONICS RELIABILITY,2011,51(12):2077-2080. |
| APA | Zhou,JH,Pang,A,Cao,S,&Zou,SC.(2011).Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 mu m partially depleted silicon-on-insulator n-MOSFETs.MICROELECTRONICS RELIABILITY,51(12),2077-2080. |
| MLA | Zhou,JH,et al."Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 mu m partially depleted silicon-on-insulator n-MOSFETs".MICROELECTRONICS RELIABILITY 51.12(2011):2077-2080. |
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