Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing
文献类型：期刊论文
| 作者 | Wei,X ; Xue,ZY ; Wu,AM ; Cao,GB ; Zhang,B ; Lin,CL ; Zhang,MA ; Wang,X |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2011 |
| 卷号 | 4期号:3页码:31301 |
| 关键词 | JAPAN SOC APPLIED PHYSICS |
| ISSN号 | 1882-0778 |
| 学科主题 | Physics ; Applied |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106763]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei,X,Xue,ZY,Wu,AM,et al. Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing[J]. APPLIED PHYSICS EXPRESS,2011,4(3):31301. |
| APA | Wei,X.,Xue,ZY.,Wu,AM.,Cao,GB.,Zhang,B.,...&Wang,X.(2011).Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing.APPLIED PHYSICS EXPRESS,4(3),31301. |
| MLA | Wei,X,et al."Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing".APPLIED PHYSICS EXPRESS 4.3(2011):31301. |
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