Investigation of silicon on insulator fabricated by two-step O+ implantation
文献类型:期刊论文
作者 | Wei,X ; Xue,ZY ; Wu,AM ; Wang,X ; Li,XY ; Ye,F ; Chen,J ; Chen,M ; Zhang,B ; Lin,CL ; Zhang,MA ; Wang,X |
刊名 | CHINESE SCIENCE BULLETIN |
出版日期 | 2011 |
卷号 | 56期号:4-5页码:444-448 |
ISSN号 | 1001-6538 |
关键词 | SCIENCE CHINA PRESS |
学科主题 | Multidisciplinary Sciences |
公开日期 | 2012-04-10 |
源URL | [http://ir.sim.ac.cn/handle/331004/106766] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wei,X,Xue,ZY,Wu,AM,et al. Investigation of silicon on insulator fabricated by two-step O+ implantation[J]. CHINESE SCIENCE BULLETIN,2011,56(4-5):444-448. |
APA | Wei,X.,Xue,ZY.,Wu,AM.,Wang,X.,Li,XY.,...&Wang,X.(2011).Investigation of silicon on insulator fabricated by two-step O+ implantation.CHINESE SCIENCE BULLETIN,56(4-5),444-448. |
MLA | Wei,X,et al."Investigation of silicon on insulator fabricated by two-step O+ implantation".CHINESE SCIENCE BULLETIN 56.4-5(2011):444-448. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。