中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films

文献类型:期刊论文

作者Song,SN ; Song,ZT ; Wu,LC ; Liu,B ; Feng,SL
刊名JOURNAL OF APPLIED PHYSICS
出版日期2011
卷号109期号:3页码:34503
关键词AMER INST PHYSICS
ISSN号0021-8979
学科主题Physics ; Applied
公开日期2012-04-10
源URL[http://ir.sim.ac.cn/handle/331004/106774]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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GB/T 7714
Song,SN,Song,ZT,Wu,LC,et al. Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films[J]. JOURNAL OF APPLIED PHYSICS,2011,109(3):34503.
APA Song,SN,Song,ZT,Wu,LC,Liu,B,&Feng,SL.(2011).Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films.JOURNAL OF APPLIED PHYSICS,109(3),34503.
MLA Song,SN,et al."Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films".JOURNAL OF APPLIED PHYSICS 109.3(2011):34503.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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