Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Sui, YP ; Yu, GH |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:6页码:67807 |
| 关键词 | IOP PUBLISHING LTD |
| ISSN号 | 0256-307X |
| 学科主题 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106783]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sui, YP,Yu, GH. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2011,28(6):67807. |
| APA | Sui, YP,&Yu, GH.(2011).Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.CHINESE PHYSICS LETTERS,28(6),67807. |
| MLA | Sui, YP,et al."Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy".CHINESE PHYSICS LETTERS 28.6(2011):67807. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。