中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application

文献类型:期刊论文

作者Zhou,XL ; Wu,LC ; Song,ZT ; Rao,F ; Liu,B ; Yao,DN ; Yin,WJ ; Feng,SL ; Chen,BM
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2011
卷号103期号:4页码:1077-1081
ISSN号0947-8396
关键词SPRINGER
学科主题Materials Science ; Multidisciplinary; Physics ; Applied
公开日期2012-04-10
源URL[http://ir.sim.ac.cn/handle/331004/106784]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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Zhou,XL,Wu,LC,Song,ZT,et al. Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,103(4):1077-1081.
APA Zhou,XL.,Wu,LC.,Song,ZT.,Rao,F.,Liu,B.,...&Chen,BM.(2011).Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,103(4),1077-1081.
MLA Zhou,XL,et al."Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 103.4(2011):1077-1081.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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