Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation
文献类型：期刊论文
| 作者 | Zhang,B ; Yu,W ; Zhao,QT ; Buca,D ; Hollander,B ; Hartmann,JM ; Zhang,M ; Wang,X ; Mantl,S |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 14期号:7页码:H261-H263 |
| 关键词 | ELECTROCHEMICAL SOC INC |
| ISSN号 | 1099-0062 |
| 学科主题 | Electrochemistry; Materials Science ; Multidisciplinary |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106790]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang,B,Yu,W,Zhao,QT,et al. Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2011,14(7):H261-H263. |
| APA | Zhang,B.,Yu,W.,Zhao,QT.,Buca,D.,Hollander,B.,...&Mantl,S.(2011).Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation.ELECTROCHEMICAL AND SOLID STATE LETTERS,14(7),H261-H263. |
| MLA | Zhang,B,et al."Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation".ELECTROCHEMICAL AND SOLID STATE LETTERS 14.7(2011):H261-H263. |
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