中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Phase transition behaviors of Ga30Sb70/Sb80Te20 nanocomposite multilayer films for application in phase change random access memory

文献类型:期刊论文

作者Wang,CZ ; Zhai,JW ; Song,SNA ; Song,ZT ; Yao,X
刊名CURRENT APPLIED PHYSICS
出版日期2011
卷号11期号:3页码:S345-S348
关键词ELSEVIER SCIENCE BV
ISSN号1567-1739
学科主题Materials Science ; Multidisciplinary; Physics ; Applied
公开日期2012-04-10
源URL[http://ir.sim.ac.cn/handle/331004/106814]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wang,CZ,Zhai,JW,Song,SNA,et al. Phase transition behaviors of Ga30Sb70/Sb80Te20 nanocomposite multilayer films for application in phase change random access memory[J]. CURRENT APPLIED PHYSICS,2011,11(3):S345-S348.
APA Wang,CZ,Zhai,JW,Song,SNA,Song,ZT,&Yao,X.(2011).Phase transition behaviors of Ga30Sb70/Sb80Te20 nanocomposite multilayer films for application in phase change random access memory.CURRENT APPLIED PHYSICS,11(3),S345-S348.
MLA Wang,CZ,et al."Phase transition behaviors of Ga30Sb70/Sb80Te20 nanocomposite multilayer films for application in phase change random access memory".CURRENT APPLIED PHYSICS 11.3(2011):S345-S348.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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