The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD
文献类型：期刊论文
| 作者 | Yang, XM ; Zhuge, LJ ; Wu, XM ; Yu, T ; Ge, SB |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2011 |
| 卷号 | 51期号:12页码:2115-2118 |
| 关键词 | PERGAMON-ELSEVIER SCIENCE LTD |
| ISSN号 | 0026-2714 |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 语种 | 英语 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106821]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, XM,Zhuge, LJ,Wu, XM,et al. The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD[J]. MICROELECTRONICS RELIABILITY,2011,51(12):2115-2118. |
| APA | Yang, XM,Zhuge, LJ,Wu, XM,Yu, T,&Ge, SB.(2011).The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD.MICROELECTRONICS RELIABILITY,51(12),2115-2118. |
| MLA | Yang, XM,et al."The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD".MICROELECTRONICS RELIABILITY 51.12(2011):2115-2118. |
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