Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation
文献类型：期刊论文
| 作者 | Yang, XM ; Wu, XM ; Zhuge, LJ ; Yu, T |
| 刊名 | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
 |
| 出版日期 | 2011 |
| 卷号 | 44期号:2页码:361-366 |
| 关键词 | ELSEVIER SCIENCE BV |
| ISSN号 | 1386-9477 |
| 学科主题 | Nanoscience & Nanotechnology; Physics, Condensed Matter |
| 语种 | 英语 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106825]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, XM,Wu, XM,Zhuge, LJ,et al. Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2011,44(2):361-366. |
| APA | Yang, XM,Wu, XM,Zhuge, LJ,&Yu, T.(2011).Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,44(2),361-366. |
| MLA | Yang, XM,et al."Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 44.2(2011):361-366. |
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