A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application
文献类型：期刊论文
| 作者 | Li,Y ; Wan,XD ; Song,ZT ; Xie,J ; Chen,B ; Liu,B（刘波） ; Wu,GP ; Zhu,NF ; Zhong,M ; Xu,J ; Chen,YF |
| 刊名 | CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)
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| 出版日期 | 2011 |
| 卷号 | 34期号:1页码:1053-1057 |
| 关键词 | ELECTROCHEMICAL SOCIETY INC |
| ISSN号 | 1938-5862 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106830]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li,Y,Wan,XD,Song,ZT,et al. A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011),2011,34(1):1053-1057. |
| APA | Li,Y.,Wan,XD.,Song,ZT.,Xie,J.,Chen,B.,...&Chen,YF.(2011).A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application.CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011),34(1),1053-1057. |
| MLA | Li,Y,et al."A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application".CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) 34.1(2011):1053-1057. |
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