A comprehensive study of various etch processes for the removal of suicide-block-film in submicron CMOS technologies
文献类型：期刊论文
| 作者 | Li, R ; Wang, J ; Sun, ZH ; Dong, YQ ; Kong, WR ; Yu, LJ ; He, J ; （程新红） ; Wang, CD |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2011 |
| 卷号 | 88期号:11页码:3270-3274 |
| 关键词 | ELSEVIER SCIENCE BV |
| ISSN号 | 0167-9317 |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied |
| 语种 | 英语 |
| 公开日期 | 2012-04-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106836]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, R,Wang, J,Sun, ZH,et al. A comprehensive study of various etch processes for the removal of suicide-block-film in submicron CMOS technologies[J]. MICROELECTRONIC ENGINEERING,2011,88(11):3270-3274. |
| APA | Li, R.,Wang, J.,Sun, ZH.,Dong, YQ.,Kong, WR.,...&Wang, CD.(2011).A comprehensive study of various etch processes for the removal of suicide-block-film in submicron CMOS technologies.MICROELECTRONIC ENGINEERING,88(11),3270-3274. |
| MLA | Li, R,et al."A comprehensive study of various etch processes for the removal of suicide-block-film in submicron CMOS technologies".MICROELECTRONIC ENGINEERING 88.11(2011):3270-3274. |
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