Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA
文献类型：期刊论文
| 作者 | Han, T ; Meng, FY ; Zhang, S ; Cheng, XM ; Oh, JI |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 110期号:6页码:63724 |
| 关键词 | AMER INST PHYSICS |
| ISSN号 | 0021-8979 |
| 学科主题 | Physics ; Applied |
| 公开日期 | 2012-04-11 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106853]  |
| 专题 | 上海微系统与信息技术研究所_新能源技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, T,Meng, FY,Zhang, S,et al. Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA[J]. JOURNAL OF APPLIED PHYSICS,2011,110(6):63724. |
| APA | Han, T,Meng, FY,Zhang, S,Cheng, XM,&Oh, JI.(2011).Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA.JOURNAL OF APPLIED PHYSICS,110(6),63724. |
| MLA | Han, T,et al."Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA".JOURNAL OF APPLIED PHYSICS 110.6(2011):63724. |
入库方式： OAI收割
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