Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation
文献类型:期刊论文
作者 | Ni, ZC ; Ishaq, A ; Yan, L(阎隆) ; Gong, JL(巩金龙) ; Zhu, DZ(朱德彰) |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2009 |
卷号 | 42期号:7页码:4 |
ISSN号 | 0022-3727 |
通讯作者 | Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
英文摘要 | The electron field emission of carbon nanotubes (CNTs) has been enhanced by Si ion beam irradiation. The defects generated by ion beam irradiation and the absorbed molecules on the CNTs were responsible for the enhancement of electron field emission. This investigation provides a possible way to improve the electron field emission properties of CNTs and understand the mechanism of electron field emission enhancement of CNTs. |
学科主题 | Physics |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000264385900041 |
公开日期 | 2012-04-11 |
源URL | [http://ir.sinap.ac.cn/handle/331007/6910] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2004-2010年 |
推荐引用方式 GB/T 7714 | Ni, ZC,Ishaq, A,Yan, L,et al. Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(7):4. |
APA | Ni, ZC,Ishaq, A,Yan, L,Gong, JL,&Zhu, DZ.(2009).Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(7),4. |
MLA | Ni, ZC,et al."Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.7(2009):4. |
入库方式: OAI收割
来源:上海应用物理研究所
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