中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation

文献类型:期刊论文

作者Ni, ZC ; Ishaq, A ; Yan, L(阎隆) ; Gong, JL(巩金龙) ; Zhu, DZ(朱德彰)
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2009
卷号42期号:7页码:4
ISSN号0022-3727
通讯作者Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
英文摘要The electron field emission of carbon nanotubes (CNTs) has been enhanced by Si ion beam irradiation. The defects generated by ion beam irradiation and the absorbed molecules on the CNTs were responsible for the enhancement of electron field emission. This investigation provides a possible way to improve the electron field emission properties of CNTs and understand the mechanism of electron field emission enhancement of CNTs.
学科主题Physics
收录类别SCI
语种英语
WOS记录号WOS:000264385900041
公开日期2012-04-11
源URL[http://ir.sinap.ac.cn/handle/331007/6910]  
专题上海应用物理研究所_中科院上海应用物理研究所2004-2010年
推荐引用方式
GB/T 7714
Ni, ZC,Ishaq, A,Yan, L,et al. Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(7):4.
APA Ni, ZC,Ishaq, A,Yan, L,Gong, JL,&Zhu, DZ.(2009).Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(7),4.
MLA Ni, ZC,et al."Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.7(2009):4.

入库方式: OAI收割

来源:上海应用物理研究所

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