Large-area and high-density silicon nanocone arrays by Ar+ sputtering at room temperature
文献类型：期刊论文
| 作者 | Li, QT(李勤涛） ; Ni, ZC（倪志春） ; Yang, SM ; Gong, JL（巩金龙） ; Zhu, DZ（朱德彰） ; Zhu, ZY（朱志远） |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2008 |
| 卷号 | 266期号:1页码:197 |
| ISSN号 | 0168-583X |
| 通讯作者 | Gong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
| 英文摘要 | The large-area, high-density of similar to 1-2 x 10(9)/cm(2) silicon nanocone arrays by ion-irradiation with incident angle of 75 degrees have been achieved by using carbon-cone-mask. The scanning electron microscopy (SEM) images show that the width of silicon nanocones is similar to 150 nm and the height is similar to 400 mm. The investigation of SEM shows that the formation of the silicon nanocones proceeds through three periods, carbon nanocones-nanocones with carbon on the top and silicon at the bottom-silicon nanocones. (C) 2007 Published by Elsevier B.V. |
| 学科主题 | Nuclear Science & Technology; Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000253080300030 |
| 公开日期 | 2012-04-18 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/7763]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2004-2010年 |
| 推荐引用方式 GB/T 7714 | Li, QT,Ni, ZC,Yang, SM,et al. Large-area and high-density silicon nanocone arrays by Ar+ sputtering at room temperature[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2008,266(1):197. |
| APA | Li, QT,Ni, ZC,Yang, SM,Gong, JL,Zhu, DZ,&Zhu, ZY.(2008).Large-area and high-density silicon nanocone arrays by Ar+ sputtering at room temperature.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,266(1),197. |
| MLA | Li, QT,et al."Large-area and high-density silicon nanocone arrays by Ar+ sputtering at room temperature".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 266.1(2008):197. |
入库方式： OAI收割
来源：上海应用物理研究所
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