Selective growth of diamond by hot filament CVD using patterned carbon film as mask
文献类型：期刊论文
| 作者 | He, ZT(贺周同） ; Yang, SM ; Li, QT（李勤涛） ; Zhu, DZ（朱德彰） ; Gong, JL（巩金龙） |
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2008 |
| 卷号 | 19期号:2页码:83 |
| ISSN号 | 1001-8042 |
| 通讯作者 | Gong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
| 英文摘要 | Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition. Needle tip scraped lines were used to grow diamond films. Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced. The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process. Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching, the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000256955100005 |
| 公开日期 | 2012-04-18 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/7819]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2004-2010年 |
| 推荐引用方式 GB/T 7714 | He, ZT,Yang, SM,Li, QT,et al. Selective growth of diamond by hot filament CVD using patterned carbon film as mask[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(2):83. |
| APA | He, ZT,Yang, SM,Li, QT,Zhu, DZ,&Gong, JL.(2008).Selective growth of diamond by hot filament CVD using patterned carbon film as mask.NUCLEAR SCIENCE AND TECHNIQUES,19(2),83. |
| MLA | He, ZT,et al."Selective growth of diamond by hot filament CVD using patterned carbon film as mask".NUCLEAR SCIENCE AND TECHNIQUES 19.2(2008):83. |
入库方式： OAI收割
来源：上海应用物理研究所
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