Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy
文献类型：期刊论文
| 作者 | Huang HC ; Wang HB ; Yan DH |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:8页码:文献编号：086801 |
| 关键词 | P-SEXIPHENYL MONOLAYER TRANSISTORS MOBILITY SIZE |
| ISSN号 | 0256-307x |
| 通讯作者 | huang hc |
| 中文摘要 | we investigate the heterojunction effect between para-sexiphenyl (p-6p) and copper phthalocyanine (cupc) using kelvin probe force microscopy. cupc films are grown on the inducing layer p-6p by a weak epitaxy growth technique. the surface potential images of kelvin probe force microscopy indicate the band bending in cupc, which reduces grain boundary barriers and lead to the accumulation of holes in the cupc layer. the electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the cupc layers. the relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000280577200042 |
| 公开日期 | 2012-04-26 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/43553]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang HC,Wang HB,Yan DH. Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy[J]. chinese physics letters,2010,27(8):文献编号：086801. |
| APA | Huang HC,Wang HB,&Yan DH.(2010).Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy.chinese physics letters,27(8),文献编号：086801. |
| MLA | Huang HC,et al."Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy".chinese physics letters 27.8(2010):文献编号：086801. |
入库方式： OAI收割
来源：长春应用化学研究所
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