Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films
文献类型：期刊论文
| 作者 | Liang GF(梁广飞) ; Zhang K(张科) ; Zhai FX(翟凤箫) ; Huang H(黄欢) ; Wang Y(王阳) ; Wu YQ(吴谊群) |
| 刊名 | Chemical Physics Letters
 |
| 出版日期 | 2011-03-23 |
| 期号 | 507页码:203-207 |
| 公开日期 | 2012-05-08 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/10717]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Liang GF,Zhang K,Zhai FX,et al. Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films[J]. Chemical Physics Letters,2011(507):203-207. |
| APA | 梁广飞,张科,翟凤箫,黄欢,王阳,&吴谊群.(2011).Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films.Chemical Physics Letters(507),203-207. |
| MLA | 梁广飞,et al."Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films".Chemical Physics Letters .507(2011):203-207. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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