Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate
文献类型：期刊论文
| 作者 | Chen, CC ; Yu, BH ; Liu, JF ; Cao, JQ（曹建清） ; Zhu, DZ（朱德彰） ; Liu, ZH |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2005 |
| 卷号 | 239期号:4页码:433 |
| 关键词 | strain relaxation UHVCVD ion implantation SiGe |
| ISSN号 | 0168-583X |
| 通讯作者 | Chen, CC (reprint author), XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Peoples R China |
| 学科主题 | Chemistry |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-05-03 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/8084]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2004-2010年 |
| 推荐引用方式 GB/T 7714 | Chen, CC,Yu, BH,Liu, JF,et al. Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2005,239(4):433. |
| APA | Chen, CC,Yu, BH,Liu, JF,Cao, JQ,Zhu, DZ,&Liu, ZH.(2005).Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,239(4),433. |
| MLA | Chen, CC,et al."Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 239.4(2005):433. |
入库方式： OAI收割
来源：上海应用物理研究所
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