Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods
文献类型：期刊论文
| 作者 | Q. Chen ; T. Lu ; M. Xu ; C. Meng ; Y. Hu ; K. Sun ; I. Shlimak |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:7 |
| 关键词 | transmutation-doped gaas electrical-properties misfit dislocations lasers go silicon films |
| ISSN号 | 0003-6951 |
| 中文摘要 | Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO(2) film were formed by using (74)Ge(+) ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from (74)Ge by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553770] |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30262]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Q. Chen,T. Lu,M. Xu,et al. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods[J]. Applied Physics Letters,2011,98(7). |
| APA | Q. Chen.,T. Lu.,M. Xu.,C. Meng.,Y. Hu.,...&I. Shlimak.(2011).Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods.Applied Physics Letters,98(7). |
| MLA | Q. Chen,et al."Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods".Applied Physics Letters 98.7(2011). |
入库方式： OAI收割
来源：金属研究所
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